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BAV19 데이터시트(PDF) 1 Page - EIC discrete Semiconductors

부품명 BAV19
상세설명  SWITCHING DIODES
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제조업체  EIC [EIC discrete Semiconductors]
홈페이지  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

BAV19 데이터시트(HTML) 1 Page - EIC discrete Semiconductors

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BAV19 ~ BAV21
SWITCHING DIODES
FEATURES :
• switching speed: max. 50 ns
• For general purpose
• This diode is also available in other case styles
including: the the MiniMELF case with the type
designation BAV101 to BAV103, the SOT-23 case
with the type designation BAS19 to BAS21
* Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics (Rating at 25
°C ambient temperature unless otherwise specified.)
Symbol
Value
Unit
BAV19
120
BAV20
200
BAV21
250
BAV19
100
BAV20
150
BAV21
200
Maximum Rectified Current (Average)
Half Wave Rectification with Resist. Load
Maximum Continuous Current
(1)
IF
mA
Maximum Power Dissipation
(1)
PD
500
mW
Maximum Repetitive Peak Forward Current
(1)
IFRM
625
mA
Maximum Non-repetitive Peak Forward Current at t = 1s
IFSM
1.0
A
Maximum Junction Temperature
(1)
TJ
175
°C
Storage Temperature Range
(1)
TS
-65 to + 175
°C
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics (T
J = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BAV19
VR = 100 V
-
-
100
BAV20
VR = 150 V
-
-
100
BAV21
VR = 200 V
-
-
100
Forward Voltage
VF
IF = 100 mA
-
-
1.0
V
Diode Capacitance
Cd
-
1.5
-
pF
IF = 30mA , IR = 30mA
IRR = 3mA , RL = 100 Ω
Page 1 of 2
Rev. 02 : March 25, 2005
f = 1MHz ; VR = 0
VRRM
V
VRM
V
IF(AV)
200
mA
Reverse Recovery Time
Trr
ns
50
-
-
IR
nA
250
Parameter
Reverse Current
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Test Condition
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark


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