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BZX55C39 데이터시트(PDF) 1 Page - EIC discrete Semiconductors |
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BZX55C39 데이터시트(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BZX55C2V0 ~ BZX55C100 SILICON ZENER DIODES VZ : 2.0 - 100 Volts PD : 500 mW FEATURES : * Complete 2.0 to 100 Volts * High surge current capability * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA * Case : Molded glass * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end. When operated in zener mode, cathode will be positive with respect to anode * Mounting position : Any * Weight : 0.13 gram (approx.) MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Symbol Value Unit Power Dissipation (Note1) PD 500 mW Maximum Forward Voltage at IF =100 mA VF 1.0 V Maximum Thermal Resistance Junction to Ambient Air (Note1) R θJA 300 °C/W Junction Temperature Range Tj - 65 to + 200 °C Storage Temperature Range Ts - 65 to + 200 °C Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature. Page 1 of 2 Rev. 05 : June 25, 2005 DO - 35 Dimensions in inches and ( millimeters ) 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. 1.00 (25.4) min. 1.00 (25.4) min. |
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