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STGB18N40LZ 데이터시트(PDF) 1 Page - STMicroelectronics |
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STGB18N40LZ 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 19 page May 2009 Doc ID 14322 Rev 5 1/19 19 STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor Application ■ Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. Figure 1. Internal schematic diagram 3 2 1 1 3 IPAK DPAK 1 2 3 1 3 I²PAK D²PAK 1 2 3 TO-220 C (2 or TAB) E (3) G (1) RG RGE SC30180 Table 1. Device summary Order codes Marking Package Packaging STGB18N40LZ-1 GB18N40LZ I²PAK Tube STGB18N40LZT4 GB18N40LZ D²PAK Tape and reel STGD18N40LZ-1 GD18N40LZ IPAK Tube STGD18N40LZT4 GD18N40LZ DPAK Tape and reel STGP18N40LZ GP18N40LZ TO-220 Tube www.st.com |
유사한 부품 번호 - STGB18N40LZ_09 |
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유사한 설명 - STGB18N40LZ_09 |
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