전자부품 데이터시트 검색엔진 |
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BAT165 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BAT165 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2007-04-19 1 BAT165... Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAT165 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration Marking BAT165 SOD323 single C/White Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage2) VR 40 V Forward current2) IF 750 mA Average rectified forward current (50/60Hz, sinus) IFAV 500 mA Non-repetitive peak surge forward current (t ≤ 10ms) IFSM 2.5 A Total power dissipation TS ≤ 93°C Ptot 600 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS ≤ 95 K/W 1Pb-containing package may be available upon special request 2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the atteched curves. 3For calculation of RthJA please refer to Application Note Thermal Resistance |
유사한 부품 번호 - BAT165_07 |
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유사한 설명 - BAT165_07 |
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