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BAT165 데이터시트(PDF) 1 Page - Infineon Technologies AG

부품명 BAT165
상세설명  Medium Power AF Schottky Diode
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BAT165 데이터시트(HTML) 1 Page - Infineon Technologies AG

  BAT165_07 Datasheet HTML 1Page - Infineon Technologies AG BAT165_07 Datasheet HTML 2Page - Infineon Technologies AG BAT165_07 Datasheet HTML 3Page - Infineon Technologies AG BAT165_07 Datasheet HTML 4Page - Infineon Technologies AG BAT165_07 Datasheet HTML 5Page - Infineon Technologies AG BAT165_07 Datasheet HTML 6Page - Infineon Technologies AG  
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2007-04-19
1
BAT165...
Medium Power AF Schottky Diode
• Forward current: 750 mA
Reverse voltage: 40 V
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAT165

ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Configuration
Marking
BAT165
SOD323
single
C/White
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage2)
VR
40
V
Forward current2)
IF
750
mA
Average rectified forward current (50/60Hz, sinus) IFAV
500
mA
Non-repetitive peak surge forward current
(t
≤ 10ms)
IFSM
2.5
A
Total power dissipation
TS ≤ 93°C
Ptot
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point3)
RthJS
≤ 95
K/W
1Pb-containing package may be available upon special request
2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the atteched curves.
3For calculation of RthJA please refer to Application Note Thermal Resistance


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