전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

SPI20N65C3 데이터시트(PDF) 1 Page - Infineon Technologies AG

부품명 SPI20N65C3
상세설명  New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI20N65C3 데이터시트(HTML) 1 Page - Infineon Technologies AG

  SPI20N65C3 Datasheet HTML 1Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 2Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 3Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 4Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 5Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 6Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 7Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 8Page - Infineon Technologies AG SPI20N65C3 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 15 page
background image
200
9-12-01
Rev. 3.
1
Page 1
SPP20N65C3, SPA20N65C3
SPI20N65C3
Cool MOS™ Power Transistor
V DS
650
V
RDS(on)
0.19
ID
20.7
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P
G-TO262
P
G-TO220FP PG-TO220
P-TO220-3-31
1
2
3
Marking
20N65C3
20N65C3
20N65C3
Type
Package
Ordering Code
SPP20N65C3
P
G-TO220
Q67040-S4556
SPA20N65C3
P
G-TO220FP
SP000216362
SPI20N65C3
P
G-TO262
Q67040-S4560
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
20.7
13.1
20.71)
13.11)
A
Pulsed drain current, tp limited by Tjmax
ID puls
62.1
62.1
A
Avalanche energy, single pulse
ID=3.5A, VDD=50V
EAS
690
690
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7A, VDD=50V
EAR
1
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
7
7
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
208
34.5
W
SPP_I
Operating and storage temperature
Tj , Tstg
-55...+150
°C


유사한 부품 번호 - SPI20N65C3

제조업체부품명데이터시트상세설명
logo
Infineon Technologies A...
SPI20N65C3 INFINEON-SPI20N65C3 Datasheet
784Kb / 14P
   Cool MOS??Power Transistor
2003-08-15
SPI20N65C3 INFINEON-SPI20N65C3 Datasheet
1Mb / 15P
   New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
Rev. 3.0 2007-08-30
logo
Inchange Semiconductor ...
SPI20N65C3 ISC-SPI20N65C3 Datasheet
331Kb / 2P
   isc N-Channel MOSFET Transistor
More results

유사한 설명 - SPI20N65C3

제조업체부품명데이터시트상세설명
logo
Infineon Technologies A...
SPP04N60C3 INFINEON-SPP04N60C3_09 Datasheet
594Kb / 14P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.1 2009-11-26
SPP15N60C3 INFINEON-SPP15N60C3_09 Datasheet
689Kb / 14P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.2 2009-12-22
SPP07N60C3 INFINEON-SPP07N60C3_09 Datasheet
625Kb / 15P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.2 2009-11-27
SPP03N60C3 INFINEON-SPP03N60C3_09 Datasheet
599Kb / 14P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 3.1 2009-11-26
SPP04N60S5 INFINEON-SPP04N60S5_07 Datasheet
1,001Kb / 11P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.6 2007-08-30
SPW11N80C3 INFINEON-SPW11N80C3_08 Datasheet
684Kb / 11P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.9 2008-10-15
SPB07N60C3 INFINEON-SPB07N60C3_05 Datasheet
1Mb / 13P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.5 2005-09-14
SPN01N60C3 INFINEON-SPN01N60C3_05 Datasheet
7Mb / 9P
   New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Rev. 2.2 2005-02-21
SPN03N60S5 INFINEON-SPN03N60S5_05 Datasheet
4Mb / 9P
   New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated
Rev. 2.2 2005-02-21
SPA20N60CFD INFINEON-SPA20N60CFD_09 Datasheet
654Kb / 12P
   CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
Rev. 1.3 2009-12-22
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com