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SMBTA14 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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SMBTA14 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2007-04-19 1 SMBTA14/MMBTA14 1 2 3 NPN Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCES 30 V Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 Collector current IC 300 mA Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 81 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 210 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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