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TEA1623PH 데이터시트(PDF) 10 Page - NXP Semiconductors |
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10 / 20 page TEA1623P_TEA1623PH All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 30 August 2010 10 of 20 NXP Semiconductors TEA1623P; TEA1623PH STARplug switched mode power supply controller IC 11. Characteristics Table 6. Characteristics Tamb = 25 °C; no overtemperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies Supply on pin VCC VCC(start) start voltage 9 9.5 10 V VCC(stop) stop voltage undervoltage lockout 7.0 7.5 8.0 V ICC(operate) operating supply current normal operation - 1.3 1.9 mA ICC(startup) start-up supply current start-up - 180 400 μA ICC(ch) charging current VDRAIN >60V VCC =0V −650 −520 −390 μA VCC =8.5 V −375 −275 −175 μA Supply on pin DRAIN IDRAIN supply current drawn from pin DRAIN no auxiliary supply - 0.5 - mA with auxiliary supply; VDRAIN >60 V - 30 125 μA PWM mode δ min minimum duty factor - 0 - % δ max maximum duty factor fosc = 100 kHz - 75 - % Self-oscillating power supply mode Vdemag demagnetization recognition voltage level 50 100 150 mV tsuppr time of suppression of transformer ringing at start of secondary stroke 1.0 1.5 2.0 μs Oscillator: pin RC VRC(min) minimum voltage of RC oscillator setting 60 75 90 mV VRC(max) maximum voltage of RC oscillator setting 2.4 2.5 2.6 V tRC(ch) RC charging time - 1 - μs fosc oscillator frequency range 10 - 200 kHz Duty factor regulator: pin REG VREG input voltage on pin REG 2.4 2.5 2.6 V GV(erroramp) voltage gain of error amplifier - 20 - dB VREG(clamp) clamping voltage on pin REG IREG =6mA - - 7.5 V Valley switching recognition dV/dtvalley valley recognition −102 - +102 V/ μs fvalley ringing frequency for valley switching N × V o = 100 V 200 550 800 kHz td(valley-on) delay from valley recognition to switch-on - 150 - ns Output stage (FET) IL(drain) drain leakage current VDRAIN = 650 V - - 125 μA |
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