BYC8DX-600 datasheet(5/11 Pages) NXP

부품명	BYC8DX-600

상세설명	Hyperfast power diode Isolated plastic package

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BYC8DX-600

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Product data sheet

Rev. 01 — 27 December 2010

5 of 11

NXP Semiconductors

BYC8DX-600

Hyperfast power diode

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF =8A; Tj = 150 °C; see Figure 4

-

1.5

1.85

V

IF =8A; Tj =25°C

-

2

2.9

V

IR

reverse current

VR =500 V; Tj = 100 °C

-

1.1

3

mA

VR =600 V

-

9

40

µA

Dynamic characteristics

Qr

recovered charge

IF =1A; VR = 100 V; dIF/dt = 100 A/µs

-

13

-

nC

trr

reverse recovery time

IF =8A; VR = 400 V; dIF/dt = 500 A/µs;

Tj = 100 °C

-

3240ns

IF =1A; VR =30V; dIF/dt = 50 A/µs;

Tj =25°C

-

3052ns

IF =8A; VR = 400 V; dIF/dt = 500 A/µs;

Tj =25°C; see Figure 5

-20

-ns

IRM

peak reverse recovery

current

IF =10A; VR = 400 V; dIF/dt = 500 A/µs;

Tj = 100 °C

-9.5

12

A

IF =8A; VR = 400 V; dIF/dt = 50 A/µs;

Tj = 125 °C

-1.5

5.5

A

VFR

forward recovery

voltage

IF =10A; dIF/dt = 100 A/µs; Tj =25°C;

see Figure 6

-8

10

V

Fig 4.

Forward current as a function of forward

voltage

Fig 5.

Reverse recovery definitions; ramp recovery

003aac976

0

4

8

12

16

20

012

34

VF (V)

IF

(A)

(1)

(2)

(3)

003aac562

trr

time

100 %

25 %

IF

dlF

dt

IR

IRM

Qr

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