Z0103MA0,412 datasheet(6/13 Pages) NXP

부품명	Z0103MA0,412

상세설명	4Q Triac Direct interfacing to logic level ICs

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Z0103MA0

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Product data sheet

Rev. 01 — 3 January 2011

6 of 13

NXP Semiconductors

Z0103MA0

4Q Triac

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C;

see Figure 7

0.2

-

3

mA

VD =12V; IT = 0.1 A; T2+ G-; Tj =25°C;

see Figure 7

0.2

-

3

mA

VD =12V; IT = 0.1 A; T2- G-; Tj =25°C;

see Figure 7

0.2

-

3

mA

VD =12V; IT = 0.1 A; T2- G+; Tj =25°C;

see Figure 7

0.2

-

5

mA

IL

latching current

VD =12V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; see Figure 8

--7

mA

VD =12V; IG = 0.1 A; T2+ G-; Tj =25°C;

see Figure 8

--20

mA

VD =12V; IG = 0.1 A; T2- G-; Tj =25°C;

see Figure 8

--7

mA

VD =12V; IG = 0.1 A; T2- G+; Tj =25°C;

see Figure 8

--7

mA

IH

holding current

VD =12V; Tj =25°C; see Figure 12

--7

mA

VT

on-state voltage

IT =1A; Tj =25°C; see Figure 9

-1.3

1.6

V

VGT

gate trigger voltage

VD =12V; IT = 0.1 A; Tj =25°C;

see Figure 10

--1.3

V

VD = 600 V; IT =0.1 A; Tj = 125 °C

0.2

-

V

ID

off-state current

VD = 600 V; Tj = 125 °C

--0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM =402 V; Tj = 110 °C; gate open

circuit; exponential waveform;

see Figure 11

80

--V/µs

dVcom/dt

rate of change of

commutating voltage

VD = 400 V; Tj =110 °C;

dIcom/dt = 0.44 A/ms; gate open circuit

0.5

--V/µs

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