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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLML5203GPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLML5203GPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLML5203GPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V trr Reverse Recovery Time ––– 17 26 ns TJ = 25°C, IF = -1.3A Qrr Reverse Recovery Charge ––– 12 18 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -24 -1.3 S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 98 VGS = -10V, ID = -3.0A ––– ––– 165 VGS = -4.5V, ID = -2.6A VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.1 ––– ––– S VDS = -10V, ID = -3.0A ––– ––– -1.0 VDS = -24V, VGS = 0V ––– ––– -5.0 VDS = -24V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 9.5 14 ID = -3.0A Qgs Gate-to-Source Charge ––– 2.3 3.5 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge ––– 1.6 2.4 VGS = -10V td(on) Turn-On Delay Time ––– 12 ––– VDD = -15V tr Rise Time ––– 18 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 88 ––– RG = 6.0Ω tf Fall Time ––– 52 ––– VGS = -10V Ciss Input Capacitance ––– 510 ––– VGS = 0V Coss Output Capacitance ––– 71 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 43 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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