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BTA40-800B 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 BTA40-800B
상세설명  40 A standard TRIACs
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTA40-800B 데이터시트(HTML) 3 Page - STMicroelectronics

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BTA40, BTA41, BTB41
Characteristics
Doc ID 7469 Rev 8
3/9
Table 4.
Static characteristics
Symbol
Test conditions
Value
Unit
VT
(1)
ITM = 60 A
tp = 380 µs
Tj = 25 °C
MAX.
1.55
V
Vt0
(2)
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
(2)
Dynamic resistance
Tj = 125 °C
MAX.
10
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
5
mA
1.
Minimum IGT is guaranted at 5% of IGT max.
2.
for both polarities of A2 referenced to A1
Table 5.
Thermal resistance
Symbol
Test conditions
Value
Unit
Rth(j-c)
Junction to case (AC)
RD91 (insulated) / TOP3 insulated
0.9
°C/W
TOP3
0.6
Rth(j-a)
Junction to ambient
TOP3 / TOP3 insulated
50
°C/W
Figure 1.
Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2.
On-state rms current versus case
temperature (full cycle)
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
P(W)
I
(A)
T(RMS)
180°
α
α
I
(A)
T(RMS)
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100
125
α=180°
BTA40
BTA41
BTB41
T (°C)
C
Figure 3.
Relative variation of thermal
impedance versus pulse duration
Figure 4.
On-state characteristics (maximum
values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E-03
1.E-02
1.E-01
1.E+00
K=[Z /R
th
th]
t (s)
p
Z
BTA / BTB41
th(j-a)
Zth(j-c)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
400
I
(A)
TM
V
(V)
TM
T = 25°C
j
.
T max.
V = 0.85V
R = 10 m
j
to
d
Ω
T=
j
T max.
j


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