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STPS61L45CT 데이터시트(PDF) 3 Page - STMicroelectronics |
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STPS61L45CT 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 8 page STPS61L45C Characteristics 3/8 Figure 1. Conduction losses versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( δ = 0.5), (per diode) 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 T δ=tp/T tp P (W) F(av) I (A) F(av) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 R th(j-a)=Rth(j-c) R th(j-a)=10°C/W T δ=tp/T tp Tamb(°C) I (A) F(av) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(tp) P (1 µs) ARM ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(Tj) P (25 °C) ARM ARM Figure 5. Non repetitive surge peak forward current versus overload duration (per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration 0 50 100 150 200 250 300 1.E-03 1.E-02 1.E-01 1.E+00 T C=25°C T C=75°C T C=125°C IM t δ =0.5 t(s) I (A) M 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse T δ=tp/T tp TO-247 Z/R th(j-c) th(j-c) t (s) p |
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