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2SA1160 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SA1160
상세설명  Strobe Flash Applications Medium Power Amplifier Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1160 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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2SA1160
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
• Low saturation voltage
: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−10
V
Emitter-base voltage
VEBO
−6
V
DC
IC
−2
Collector current
Pulsed (Note 1)
ICP
−4
A
Base current
IB
−2
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)


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