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2SA1160 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SA1160 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1160 2009-12-21 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −10 V Emitter-base voltage VEBO −6 V DC IC −2 Collector current Pulsed (Note 1) ICP −4 A Base current IB −2 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) |
유사한 부품 번호 - 2SA1160_09 |
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유사한 설명 - 2SA1160_09 |
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