2SA1242

2010-02-05

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1242

Strobe Flash Applications

Medium Power Amplifier Applications

• Low collector saturation voltage

• High power dissipation

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−35

V

Collector-emitter voltage

−20

V

Emitter-base voltage

−8

V

DC

−5

Collector current

Pulsed

(Note 1)

−8

A

Base current

−0.5

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)