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2SA1620 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SA1620 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SA1620 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −5 V Collector current IC −300 mA Base current IB −60 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −5 mA, IB = 0 −80 ⎯ ⎯ V hFE (1) (Note) VCE = −2 V, IC = −50 mA 70 ⎯ 240 DC current gain hFE (2) VCE = −2 V, IC = −200 mA 40 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −200 mA, IB = −20 mA ⎯ ⎯ −0.4 V Base-emitter voltage VBE VCE = −2 V, IC = −5 mA −0.55 ⎯ −0.8 V Transition frequency fT VCE = −10 V, IC = −10 mA 70 100 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 14 ⎯ pF Note: hFE classification, O: 70~140, Y: 120~240 Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
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