전자부품 데이터시트 검색엔진 |
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BC817-16 데이터시트(PDF) 1 Page - Diodes Incorporated |
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BC817-16 데이터시트(HTML) 1 Page - Diodes Incorporated |
1 / 4 page BC817-16 / -25 / -40 Document number: DS11107 Rev. 18 - 2 1 of 4 www.diodes.com April 2009 © Diodes Incorporated BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automated Insertion • Epitaxial Planar Die Construction • For Switching, AF Driver and Amplifier Applications • Complementary PNP Types Available (BC807) • Lead, Halogen and Antimony Free, RoHS Compliant • "Green" Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 • Pin Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 800 mA Peak Collector Current ICM 1000 mA Peak Emitter Current IEM 1000 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation at TSB = 50°C (Note 1) PD 310 mW Thermal Resistance, Junction to Substrate Backside (Note 1) RθSB 320 °C/W Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 403 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 2) Symbol Min Max Unit Test Condition DC Current Gain Current Gain Group -16 -25 -40 hFE 100 160 250 250 400 600 — VCE = 1.0V, IC = 100mA Current Gain Group -16 -25 -40 60 100 170 — — — — VCE = 1.0V, IC = 300mA Collector-Emitter Saturation Voltage VCE(SAT) — 0.7 V IC = 500mA, IB = 50mA Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC = 300mA Collector-Emitter Cutoff Current ICES — 100 5.0 nA µA VCE = 45V VCE = 25V, Tj = 150°C Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V Gain Bandwidth Product fT 100 — MHz VCE = 5.0V, IC = 10mA, f = 50MHz Collector-Base Capacitance CCBO — 12 pF VCB = 10V, f = 1.0MHz Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm 2 area. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Top View Device Schematic E B C Please click here to visit our online spice models database. |
유사한 부품 번호 - BC817-16 |
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유사한 설명 - BC817-16 |
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