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FZT955 데이터시트(HTML) 2 Page - Diodes Incorporated

부품명 FZT955
상세내용  SOT223 PNP SILICON PLANAR HIGH CURRENT
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제조사  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
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FZT955 데이터시트(HTML) 2 Page - Diodes Incorporated

   
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-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
Tamb=25°C
VCE(sat) v IC
IC - Collector Current (Amps)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
IC/IB=10
IC/IB=10
IC/IB=50
IC/IB=10
VCE=5V
VCE=5V
300
200
100
VCE - Collector Voltage (Volts)
Safe Operating Area
11000
10
100
0.01
0.1
1
10
Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
0.001
FZT955
FZT955
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-180
-210
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER
-180
-210
V
IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-140
-170
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-6
-8
V
IE=-100µA
Collector Cut-Off Current
ICBO
-50
-1
nA
µ
A
VCB=-150V
VCB=-150V,Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50
-1
nA
µ
A
VCB=-150V
VCB=-150V,Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-30
-70
-110
-275
-60
-120
-150
-370
mV
mV
mV
mV
IC=-100mA, IB=-5mA*
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-970
-1110 mV
IC=-3A, IB=-300mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-830
-950
mV
I+=-3A, VCE=-5V*
Static Forward
Current Transfer Ratio
hFE
100
100
75
200
200
140
10
300
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
Transition Frequency
fT
110
MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
40
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
68
1030
ns
ns
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device


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