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LB1999M 데이터시트(PDF) 3 Page - Sanyo Semicon Device |
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LB1999M 데이터시트(HTML) 3 Page - Sanyo Semicon Device |
3 / 8 page Continued from preceding page. Notes : 1. The torque ripple correction ratio is determined as follows from the Rf voltage waveform. 2. Parameters that are indicated as design target values in the conditions column are not tested. Truth Table and Control Functions No. 5975-3/8 LB1999M Correction ratio = 2 × (V p – Vb) 100 × (%) Vp – Vb For each Hall logic setting Ground level Source → Sink Hall input FR U V W 1 Phase V → Phase W H H L H Phase W → Phase V L 2 Phase U → Phase W H L L H Phase W → Phase U L 3 Phase U → Phase V H L H H Phase V → Phase U L 4 Phase W → Phase V L L H H Phase V → Phase W L 5 Phase W → Phase U L H H H Phase U → Phase W L 6 Phase V → Phase U L H L H Phase U → Phase V L Note: In the FR column, “H” refers to a voltage of 2.75 V or higher, and “L” refers to 2.25 V or lower (when VCC = 5 V.) Note: In the Hall input column, “H” refers to the state in the corresponding phase where the + input is at a potential at least 0.01 V higher than the – input, and “L” refers to the state where the – input is at a potential at least 0.01 V higher than the + input. Note: Since the drive technique adopted is a 180° technique, phases other than the sink and source phase do not turn off. Parameter Symbol Conditions Ratings Unit min typ max [Saturation] Saturation prevention circuit lower The voltages between each OUT and side voltage setting VOsat (DET) Rf pair when IO = 10 mA, Rf = 0.5 Ω, and 0.175 0.25 0.325 V VCTL = VLIM = 5 V [Schmitt Amplifier] Duty ratio DUTY Under the specified conditions (RF = 39 kΩ) 48.7 50 51.3 % Upper side output saturation voltage Vsatu (SH) IO = –20 µA 4.8 V Lower side output saturation voltage Vsatd (SH) IO = 100 µA 0.2 V Hysteresis width Vhys 32 46 60 mV TSD operating temperature T-TSD Design target value*2 170 °C |
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