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2SC5458 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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2SC5458 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SC5458 2005-02-01 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Base-emitter voltage VBE (V) IC – VBE Collector current IC (mA) VBE (sat) – IC Collector current IC (mA) VBE (sat) – IC Collector current IC (mA) hFE – IC 0 0 Common emitter Tc = 25°C 1000 10 80 60 100 40 30 20 800 600 400 200 2 4 6 8 10 IB = 5 mA 10 300 1 1 Common emitter VCE = 5 V 100 30 10 3 3 30 300 100 1000 25 Tc = 100°C −55 3 0 Common emitter VCE = 5 V −55 25 Tc = 100°C 1000 100 10 0.2 0.4 0.6 0.8 1.0 1.2 25 Tc = 100°C Common emitter IC/IB = 10 −55 10 1 3 0.05 0.3 1 3 10 30 300 1000 100 0.1 25 Tc = 100°C Common emitter IC/IB = 5 −55 10 1 3 0.05 0.3 1 3 10 30 300 1000 100 0.1 1 30 300 Common emitter VCE = 5 V 800 0 400 200 25 Tc = 100°C −55 0.4 0 0.2 0.6 1.0 0.8 1.2 600 |
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