2N3440 datasheet(2/2 Pages) MICROSEMI

부품명	2N3440

상세설명	NPN LOW POWER SILICON TRANSISTOR

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제조업체	MICROSEMI [Microsemi Corporation]

홈페이지	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/368

T4-LDS-0022 Rev. 2 (080663)

Page 2 of 2

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

IC = 20mAdc, VCE = 10Vdc

IC = 2.0mAdc, VCE = 10Vdc

IC = 0.2mAdc, VCE = 10Vdc

hFE

40

30

10

160

Collector-Emitter Saturation Voltage

IC = 50mAdc, IB = 4.0mAdc

VCE(sat)

0.5

Vdc

Base-Emitter Saturation Voltage

IC = 50mAdc, IB = 4.0mAdc

VBE(sat)

1.3

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz

|hfe|

3.0

15

Forward Current Transfer Ratio

IC = 5.0mAdc, VCE = 10V, f = 1.0kHz

hfe

25

Output Capacitance

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo

10

pF

Input Capacitance

VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

75

pF

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time

VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc

ton

1.0

µs

Turn-Off Time

VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc

toff

10

µs

SAFE OPERATING AREA

DC Tests

TC = +25°C, 1 Cycle, t = 1.0s

Test 1

VCE = 5.0Vdc, IC = 1.0Adc

Both Types

Test 2

VCE = 350Vdc, IC = 14mAdc

2N3439

Test 3

VCE = 250Vdc, IC = 20mAdc

2N3440

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%

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