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2SC3647G-X-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2SC3647G-X-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SC3647 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 5 5 www.unisonic.com.tw QW-R208-039,C ABSOLUATE MAXIUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 3 A Collector Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC = 10μA, IE =0 120 V Collector-Emitter Breakdown Voltage BVCEO IC = 1mA, RBE =∞ 100 V Emitter-Base Breakdown Voltage BVEBO IE = 10μA, IC=0 6 V Collector Cutoff Current ICBO VCB = 100V, IE =0 100 nA Emitter Cutoff Current IEBO VEB = 4V, IC =0 100 nA Collector-Emitter Saturation Voltage VCE(SAT) IC = 1A, IB = 100mA 0.13 0.4 V Base-Emitter Saturation Voltage VBE(SAT) IC = 1A, IB = 100mA 0.85 1.2 V Output Capacitance Cob VCB = 10V, f =1MHz 16 pF DC Current Gain hFE VCE = 5V, IC = 100mA 100 400 Turn-ON Time tON See specified Test Circuit. 80 ns Storage Time tSTG See specified Test Circuit. 1000 ns Fall Time tF See specified Test Circuit. 50 ns Gain-Bandwidth Product fT VCE = 10V, IC = 100mA 120 MHz ■ CLASSIFICATION OF hFE RANK R S T RANGE 100 ~ 200 140 ~ 280 200 ~ 400 |
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