전자부품 데이터시트 검색엔진 |
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IRFP360 데이터시트(PDF) 1 Page - IXYS Corporation |
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IRFP360 데이터시트(HTML) 1 Page - IXYS Corporation |
1 / 2 page 1 - 2 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 400 V V DGR T J = 25°C to 150°C; R GS = 1.0 MΩ 400 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 23 A I D100 T C = 100°C 14 A I DM T C = 25°C, pulse width limited by TJM 92 A I AR 23 A E AR T C = 25°C 30 mJ dv/dt I S ≤ I DM, di/dt 5 V/ns T J ≤ 150°C, R G = 2 Ω P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight 6 g Max lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s TO-247 AD This data reflects the objective technical specification and characterization data from engineering lots. N-Channel Enhancement Mode Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, I D = 250 µA 400 V V GS(th) V DS = V GS , I D = 250 µA 2 4 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS V DS = V DSS T J = 25°C 25 µA V GS = 0 V T J = 125°C 250 µA R DS(on) V GS = 10 V, I D = 14A 0.20 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% IRFP 360 V DSS = 400 V I D25 = 23 A R DS(on) = 0.20 Ω Ω Ω Ω Ω G = Gate, D = Drain, S = Source, TAB = Drain Features • Fast switching times • International standard packages • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • High commuting dv/dt rating Applications • DC choppers • Motor Controls • Switch-mode and resonant-mode • Uninterruptable power supplies (UPS) Advantages • Space savings • High power density • Easy to mount with 1 screw (isolated mounting screw hole) D (TAB) Preliminary data 95509A (4/95) MegaMOSTMFET IXYS reserves the right to change limits, test conditions, and dimensions. |
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