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STK400-060 데이터시트(PDF) 6 Page - Sanyo Semicon Device

부품명 STK400-060
상세설명  AF Power Amplifier (Split Power Supply) (35W 35W min, THD = 0.4%)
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

STK400-060 데이터시트(HTML) 6 Page - Sanyo Semicon Device

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STK401-060
No. 4680—6/8
External Circuit Diagram
Heatsink Design Considerations
The heatsink thermal resistance,
θc-a, required to dissipate
the STK401-060 device total power dissipation, Pd, is
determined as follows:
Condition 1: IC substrate temperature not to exceed
125
°C.
Pd
× θc-a + Ta < 125°C ........................................ (1)
where Ta is the guaranteed maximum ambient tempera-
ture.
Condition 2: Power transistor junction temperature, Tj, not
to exceed 150
°C.
Pd
× θc-a + Pd/N × θj-c + Ta < 150°C ................. (2)
where N is the number of power transistors and
θj-c is the
power transistor thermal resistance per transistor. Note
that the power dissipated per transistor is the total, Pd,
divided evenly among the N power transistors.
Expressions (1) and (2) can be rewritten making
θc-a the
subject.
θc-a < (125 − Ta)/Pd............................................. (1)′
θc-a < (150 − Ta)/Pd − θj-c/N .............................. (2)′
The heatsink required must have a thermal resistance that
simultaneously satisfies both expressions.
The heatsink thermal resistance can be determined from
(1)
′ and (2)′ once the following parameters have been
defined.
• Supply voltage, VCC
• Load resistance, RL
• Guaranteed maximum ambient temperature, Ta
The total device power dissipation when STK401-060
VCC = ±28V and RL = 6Ω, for a continuous sine wave sig-
nal, is a maximum of 54W, as shown in Figure 1.
When estimating the power dissipation for an actual audio
signal input, the rule of thumb is to select Pd correspond-
ing to 1/10 PO max (within safe limits) for a continuous
sine wave input. For example, from Figure 1,
Pd = 32.4W (for 1/10 PO max = 3.5W)
The STK401-060 has 4 power transistors, and the thermal
resistance per transistor,
θj-c, is 1.8°C/W. If the guaran-
teed maximum ambient temperature, Ta, is 50
°C, then the
required heatsink thermal resistance,
θc-a, is:
From expression (1)
′: θc-a < (125 − 50)/32.4
< 2.31
From expression (2)
′: θc-a < (150 − 50)/32.4 − 1.8/4
< 2.63
Therefore, to satisfy both expressions, the required heat-
sink must have a thermal resistance less than 2.31
°C/W.


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