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BCV28 데이터시트(PDF) 3 Page - Infineon Technologies AG

부품명 BCV28
상세설명  PNP Silicon Darlington Transistors
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BCV28 데이터시트(HTML) 3 Page - Infineon Technologies AG

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2007-04-20
3
BCV28, BCV48
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV28
IC = 10 mA, IB = 0 , BCV48
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV28
IC = 100 µA, IE = 0 , BCV48
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
10
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV28
VCB = 60 V, IE = 0 , BCV48
VCB = 30 V, IE = 0 , TA ≤ 150 °C, BCV28
VCB = 60 V, IE = 0 , TA ≤ 150 °C, BCV48
ICBO
-
-
-
-
-
-
-
-
0.1
0.1
10
10
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
100
nA
DC current gain1)
IC = 10 µA, VCE = 1 V, BCV28
IC = 10 µA, VCE = 1 V, BCV48
IC = 10 mA, VCE = 5 V, BCV28
IC = 10 mA, VCE = 5 V, BCV48
IC = 100 mA, VCE = 5 V, BCV28
IC = 100 mA, VCE = 5 V, BCV48
IC = 0.5 A, VCE = 5 V, BCV28
IC = 0.5 A, VCE = 5 V, BCV48
hFE
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat
-
-
1
V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat
-
-
1.5
1Pulse test: t < 300µs; D < 2%


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