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3N163_TO-72 데이터시트(PDF) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N163 ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation 375mW MAXIMUM CURRENT Drain Current 50mA MAXIMUM VOLTAGES Drain to Gate ‐40V Drain to Source ‐40V Peak Gate to Source 2 ±125V 3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS IGSSF Gate Forward Current ‐10 ‐‐ ‐‐ pA VGS = ‐40V, VDS = 0V TA= +125°C ‐‐ ‐‐ ‐25 BVDSS Drain to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V ID = ‐10µA, VGS = 0V BVSDS Source‐Drain Breakdown Voltage ‐40 ‐‐ ‐‐ IS = ‐10µA, VGD = 0V, VBD = 0V VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 VDS = VGS , ID = ‐10µA ‐2.0 ‐‐ ‐5.0 VDS = ‐15V, ID = ‐10µA VGS Gate Source Voltage ‐3.0 ‐‐ ‐6.5 VDS = ‐15V, ID = ‐0.5mA IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 200 pA VDS = ‐15V, VGS = 0V ISDS Source Drain Current ‐‐ ‐‐ 400 VDS = 15V, VGS = VDB = 0V rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 250 Ω VGS = ‐20V, ID = ‐100µA ID(on) Drain Current “On” ‐5.0 ‐‐ ‐30 mA VDS = ‐15V, VGS = ‐10V gfs Forward Transconductance 2000 ‐‐ 4000 µS VDS = ‐15V, ID = ‐10mA , f = 1kHz gos Output Admittance ‐‐ ‐‐ 250 Ciss Input Capacitance–Output shorted ‐‐ ‐‐ 2.5 pF VDS = ‐15V, ID = ‐10mA , f = 1MHz 3 Crss Reverse Transfer Capacitance ‐‐ ‐‐ 0.7 Coss Output Capacitance Input Shorted ‐‐ ‐‐ 3.0 SWITCHING CHARACTERISTICS ‐ TA = 25°C and VBS = 0 unless otherwise noted TIMING WAVEFORMS SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) Turn On Delay Time 12 ns VDD = ‐15V ID(on) = ‐10mA RG = RL = 1.4KΩ 3 tr Turn On Rise Time 24 toff Turn Off Time 50 SWITCHING TEST CIRCUIT The 3N163 is an enhancement mode P-Channel Mosfet 3N163 P-CHANNEL MOSFET Note 1 ‐ Absolute maximum ratings are limiting values above which 3N163 serviceability may be impaired. Note 2 – Device must not be tested at ±125V more than once or longer than 300ms. Note 3 – For design reference only, not 100% tested The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution TO-72 (Bottom View) Available Packages: 3N163 in TO-72 3N163 in bare die. Please contact Micross for full package and die dimensions 3N163 Features: Very high Input Impedance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage |
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