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3N163_TO-72 데이터시트(PDF) 1 Page - Micross Components

부품명 3N163_TO-72
상세설명  P-CHANNEL MOSFET
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제조업체  MICROSS [Micross Components]
홈페이지  http://www.micross.com
Logo MICROSS - Micross Components

3N163_TO-72 데이터시트(HTML) 1 Page - Micross Components

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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL 3N163 
ABSOLUTE MAXIMUM RATINGS
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
375mW 
MAXIMUM CURRENT
Drain Current 
50mA 
MAXIMUM VOLTAGES 
Drain to Gate ‐40V 
Drain to Source ‐40V 
Peak Gate to Source
2
±125V 
3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
IGSSF 
Gate Forward Current  
‐10 
‐‐ 
‐‐ 
pA 
VGS = ‐40V,   VDS = 0V 
 
TA= +125°C 
‐‐ 
‐‐ 
‐25 
BVDSS 
Drain to Source Breakdown Voltage ‐40 
‐‐ 
‐‐ 
 
 
I= ‐10µA,   VGS = 0V 
BVSDS 
Source‐Drain Breakdown Voltage ‐40 
‐‐ 
‐‐ 
I= ‐10µA, VGD = 0V,  VBD = 0V 
VGS(th) 
Gate to Source Threshold Voltage ‐2.0 
‐‐ 
‐5.0 
VDS =  VGS ,    I= ‐10µA 
‐2.0 
‐‐ 
‐5.0 
VDS = ‐15V,   I= ‐10µA 
VGS 
Gate Source Voltage ‐3.0 
‐‐ 
‐6.5 
VDS = ‐15V,   I= ‐0.5mA 
IDSS 
Drain Leakage Current “Off” 
‐‐ 
‐‐ 
200 
pA 
VDS = ‐15V,   VGS = 0V 
ISDS 
Source Drain Current 
‐‐ 
‐‐ 
400 
VDS = 15V,   VGS =  VDB = 0V 
rDS(on) 
Drain to Source “On” Resistance 
‐‐ 
‐‐ 
250 Ω 
VGS = ‐20V,   ID = ‐100µA 
ID(on) 
Drain Current “On” ‐5.0 
‐‐ 
‐30 
mA 
VDS = ‐15V,  VGS = ‐10V 
gfs 
Forward Transconductance 
2000 
‐‐ 
4000 
µS 
VDS = ‐15V,    ID = ‐10mA ,   f = 1kHz 
gos 
Output Admittance 
‐‐ 
‐‐ 
250 
Ciss  Input Capacitance–Output shorted 
‐‐ 
‐‐ 
2.5  
pF 
 
VDS = ‐15V,    I= ‐10mA ,   f = 1MHz
3 
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
0.7 
Coss 
Output Capacitance Input Shorted 
‐‐ 
‐‐ 
3.0 
SWITCHING CHARACTERISTICS  ‐ TA = 25°C  and  VBS = 0 unless otherwise noted                                                              TIMING WAVEFORMS 
SYMBOL 
CHARACTERISTIC 
MAX 
UNITS 
CONDITIONS 
td(on) 
Turn On Delay Time 
12  
ns 
VDD = ‐15V 
ID(on) = ‐10mA      
R= R= 1.4KΩ
3 
tr 
Turn On Rise Time 
24 
toff 
Turn Off Time 
50 
 
 
  
                                  SWITCHING TEST CIRCUIT 
The 3N163 is an enhancement mode P-Channel Mosfet
3N163
P-CHANNEL MOSFET
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N163 serviceability may be impaired. 
Note 2 – Device must not be tested at ±125V more than once or longer than 300ms. 
Note 3 – For design reference only, not 100% tested
The 3N163 is an enhancement mode P-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-72 (Bottom View)
Available Packages:
3N163 in TO-72
3N163 in bare die.
Please contact Micross for full
package and die dimensions
3N163 Features:
Very high Input Impedance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage


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