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STK730C 데이터시트(PDF) 4 Page - Sanyo Semicon Device |
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STK730C 데이터시트(HTML) 4 Page - Sanyo Semicon Device |
4 / 6 page STK730C No. 4472-4/6 Thermal Design The power dissipating sections of a power supply block consist of the power transistor (PTR), the flywheel diode (FWD), the choke coil, and the current detection resistor. Of these, the components that are incorporated in the hybrid IC itself are the PTR and the FWD. Taking PT to be the power dissipated in the PTR and PF to be the power dissipated in the FWD, the power dissipation Pd for the whole hybrid IC and the heat sink thermal resistance θc-a can be expressed as follows. Pd = (PT + PF) (W) Tc – Ta θc-a = (°C/W) Pd Tc: Substrate temperature (105°C, maximum) Ta: IC ambient temperature The junction temperature, Tj, of each element can be expressed as follows. Tj = PD × θj-c + Tc (°C) PD: Power loss for each element (PT, PF) θj-c: The junction/case thermal resistance of each element Thermal design consists of deriving the heat sink thermal resistance θc-a that satisfies the two thermal conditions, i.e., the maximum IC substrate temperature Tc max (105°C) and the maximum junction temperature Tj max for each semiconductor device, and then implementing that thermal resistance. Since thermal dissipation is greatly influenced by the ambient temperature, the structure of the equipment itself, and other factors, ample margins must be included in the thermal design to take them into account. The figure below left shows the relationship between area and thermal resistance when an aluminum plate is used in the thermal design. The radiation characteristics of an aluminum plate can be improved by painting the surface black. This can reduce the thermal resistance by 20% for a given surface area. IC power dissipation Output current, IO – A IC power dissipation Output current, IO – A θc-a – S Heat sink area, S – cm2 IC power dissipation Output current, IO – A |
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