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2SA1300 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1300 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page 2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 19-Jan-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage CLASSIFICATION OF hFE(1) Product-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Range 140~280 200~400 300~600 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -20 V Collector to Emitter Voltage VCEO -10 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -20 - - V IC= -1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -10 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -0.1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -20V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -6V, IC=0 DC Current Gain hFE 140 - 600 VCE= -1V, IC= -0.5A Collector to Emitter Saturation Voltage VCE(sat) - - -0.82 V IC= -2A, IB= -0.1A Base to Emitter Voltage VBE - - -1.5 V VCE= -1V, IC= -2A Transition Frequency fT - 140 - MHz VCE= -1V, IC= -0.5A, f=30MHz Collector Output Capacitance Cob - 50 - pF VCB= -10V, IE=0, f=1MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J Emitter Collector Base |
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