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BC807-16 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 BC807-16
상세설명  PNP Plastic Encapsulate Transistor
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC807-16 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
BC807-16, -25, -40
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
01-June-2002 Rev. B
Page 1 of 2
Collector
Base
Emitter
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B S
G
V
3
1
2
D
Top View
1
2
3
RoHS Compliant Product
A suffix of “-C” specifies halogen-free & RoHS compliant
FEATURES
Ideally suited for automatic insertion
Epitaxial planar die construction
Complementary to BC817 (NPN Type)
MARKING
BC807-16:5A;
BC807-25:5B;
BC807-40:5C
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Collector Power Dissipation
PC
300
mW
Junction, Storage Temperature
TJ, TSTG
+150, -55 ~ +150
CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Max.
Unit
Test Conditions
BVCBO
-50
-
V
IC = -10 uA, IE = 0
BVCEO
-45
-
V
IC = -10 mA, IB = 0
BVEBO
-5
-
V
IE = -1 uA, IC = 0
ICBO
-
-0.1
uA
VCB = -45V, IE = 0
ICEO
-
-0.2
uA
VCE = -40V, IB = 0
IEBO
-
-0.1
uA
VEB = -4V, IC = 0
VCE(sat)
-
-0.7
V
IC = -500mA, IB = -50 mA
VBE(sat)
-
-1.2
V
IC = -500mA, IB = -50 mA
hFE(1)
807-16
807-25
807-40
100
160
250
250
400
600
VCE = -1 V, IC = -100 mA
fT
100
-
MHz
VCE = -5 V, IC = -10 mA, f = 100MHz


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