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BC847C 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 BC847C
상세설명  BC846A
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC847C 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
BC846A, B
BC847A, B, C
BC848A, B, C
Collect current : 0.1A
n
General Purpose Transistor NPN Type
n
RoHS compliant product
n
Operating Temp. : -55O
n
C ~ +150OC
FEATURES
C OLLE C TOR
3
1
BAS E
2
E MITTE R
D
Top View
1
2
3
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B S
G
V
3
1
2
http://www.SeCoSGmbH.com
Elektronische Bauelemente
ELECTRICAL
CHARACTERISTICS
Tamb=25
unless
otherwise
specified
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
BC846
BC847
BC848
VCBO
Ic= 10
A
IE=0
80
50
30
V
Collector-emitter breakdown voltage
BC846
BC847
BC848
VCEO
Ic= 10
mA
IB=0
65
45
30
V
Emitter-base breakdown voltage
VEBO
IE= 10
A
IC=0
6
V
Collector cut-off current
BC846
BC847
BC848
ICBO
VCB= 70 V ,
IE=0
VCB= 50 V ,
IE=0
VCB= 30 V ,
IE=0
0.1
A
Collector cut-off current
BC846
BC847
BC848
ICEO
VCE= 60 V ,
IB=0
VCE= 45 V ,
IB=0
VCE= 30 V ,
IB=0
0.1
A
Emitter cut-off current
IEBO
VEB= 5 V ,
IC=0
0.1
A
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
HFE 1
VCE= 5V,
IC= 2mA
110
200
420
220
450
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,
IB= 5 mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 100 mA, IB= 5mA
1.1
V
Transition frequency
fT
VCE= 5 V,
IC= 10mA
f=100MHz
100
MHz
DEVICE MARKING
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K; BC848C=1L
01-Jun-200
4 Rev.B
Page 1 of 3
A suffix of "-C" specifies halogen & lead-free


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