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IRF240SMD 데이터시트(PDF) 2 Page - Seme LAB |
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IRF240SMD 데이터시트(HTML) 2 Page - Seme LAB |
2 / 2 page IRF240SMD Prelim. 7/00 LAB SEME Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 8.8A VGS = 10V ID = 13.9A VDS = VGS ID = 250mA VDS ³ 15V IDS = 8.8A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 13.9A VDS = 0.5BVDSS ID = 13.9A VDS = 0.5BVDSS VDD = 100V ID = 13.9A RG = 9.1W IS = 13.9A TJ = 25°C VGS = 0 IF = 13.9A TJ = 25°C di / dt £ 100A/msVDD £ 50V ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance 1 Gate Threshold Voltage Forward Transconductance 1 Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate – Source Charge 1 Gate – Drain (“Miller”) Charge 1 Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time 200 0.29 0.180 0.250 24 6.1 25 250 100 –100 1300 400 130 32 60 2.2 10.6 14.2 37.6 20 152 58 67 13.9 56 1.5 500 5.3 Negligible 0.8 2.8 V V/°C W V S( W mA nA pF nC nC ns A V ns mC nH BVDSS DBVDSS DTJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS STATIC ELECTRICAL RATINGS Notes 1) Pulse Test: Pulse Width £ 300ms, d£ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) PACKAGE CHARACTERISTICS |
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