IRF240SMD datasheet(2/2 Pages) SEME-LAB

부품명	IRF240SMD

상세설명	N.CHANNEL POWER MOSFET

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제조업체	SEME-LAB [Seme LAB]

홈페이지	http://www.semelab.co.uk

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IRF240SMD

Prelim. 7/00

LAB

SEME

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS = 0

ID = 1mA

Reference to 25°C

ID = 1mA

VGS = 10V

ID = 8.8A

VGS = 10V

ID = 13.9A

VDS = VGS

ID = 250mA

VDS ³ 15V

IDS = 8.8A

VGS = 0

VDS = 0.8BVDSS

TJ = 125°C

VGS = 20V

VGS = –20V

VGS = 0

VDS = 25V

f = 1MHz

VGS = 10V

ID = 13.9A

VDS = 0.5BVDSS

ID = 13.9A

VDS = 0.5BVDSS

VDD = 100V

ID = 13.9A

RG = 9.1W

IS = 13.9A

TJ = 25°C

VGS = 0

IF = 13.9A

TJ = 25°C

di / dt £ 100A/msVDD £ 50V

ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance 1

Gate Threshold Voltage

Forward Transconductance 1

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 1

Gate – Source Charge 1

Gate – Drain (“Miller”) Charge 1

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current 2

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

200

0.29

0.180

0.250

24

6.1

25

250

100

–100

1300

400

130

32

60

2.2

10.6

14.2

37.6

20

152

58

67

13.9

56

1.5

500

5.3

Negligible

0.8

2.8

V

V/°C

W

V

S(

W

mA

nA

pF

nC

ns

A

V

ns

mC

nH

BVDSS

DBVDSS

DTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

IS

ISM

VSD

trr

Qrr

ton

LD

LS

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance (from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

유사한 부품 번호 - IRF240SMD

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	IRF240	211Kb / 5P	N-CHANNEL POWER MOSFET
Seme LAB	IRF240	19Kb / 2P	N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
Fairchild Semiconductor	IRF240	140Kb / 5P	N-Channel Power MOSFETs, 18A, 150-200V
Intersil Corporation	IRF240	59Kb / 7P	18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
International Rectifier	IRF240	149Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED

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IRF240SMD 데이터시트(PDF) 2 Page - Seme LAB

IRF240SMD 데이터시트(HTML) 2 Page - Seme LAB

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