Elektronische Bauelemente

SSG4224

10

N-Channel Enhancement Mode Power Mos.FET

Ω

Description

Features

* Simple Drive Requirement

* Low On-Resistance

4224

4224

* Dual N MOSFET Package

The SSG

RoHS Compliant Product

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

0.25

Dimensions in millimeters

6

.20

5.80

1.27Typ.

0.35

0.49

4.80

5.00

0

0.100.25

1.35

1.75

0.40

0.90

0.19

0.25

3.80

4.00

0.375 REF

o

8

o

45

o

S1

G1

S2

G2

D1

D1

D2

D2

SS

Date Code

1

5

7

8

2

3

4

6

SOP-8

01-Jun-2002 Rev. A

Page 1 of

4

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current

1

3

3

Parameter

Symbol

Ratings

Unit

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient

Max.

A

V

V

A

A

/W

C

W/ C

C

W

Tj, Tstg

Rthj-a

30

10

8

±20

30

2

0.016

-55~+150

62.5

3

o

o

o

C

o

C

o

C

o

Absolute Maximum Ratings

D1

G1

S1

G2

D2

S2