SSG5509A datasheet(3/7 Pages) SECOS

부품명	SSG5509A

상세설명	N & P-Ch Enhancement Mode Power MOSFET

Download	7 Pages

Scroll/Zoom	100%

제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

Logo

3 / 7 page

SSG5509A

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ

Ω

P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ

Ω

Elektronische Bauelemente

27-Jun-2011 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

-

V

VGS=0, ID= -250µA

Gate Threshold Voltage

VGS(th)

-0.5

-

-1.2

V

VDS=VGS, ID= -250µA

Forward Transconductance

gfs

-

11

-

S

VDS= -5V, ID= -5A

Gate-Source Leakage Current

IGSS

-

±100

nA

VGS= ±12V

Drain-Source Leakage Current(TJ =25℃

℃

℃)

IDSS

-

-1

µA

VDS= -24V, VGS=0

Drain-Source Leakage Current(TJ =70℃

℃

℃)

-

-25

µA

VDS= -24V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

-

55

m

VGS= -10V, ID= -4.2A

-

70

VGS= -4.5V, ID= -4A

-

120

VGS= -2.5V, ID= -1A

Total Gate Charge

2

Qg

-

9.4

-

nC

ID= -4 A

VDS= -15V

VGS= -4.5V

Gate-Source Charge

Qgs

-

2

-

Gate-Drain (“Miller”) Change

Qgd

-

3

-

Turn-on Delay Time

2

Td(on)

-

6.3

-

nS

VDS= -15V

VGS= -10V

RG=6

RL=3.6

Rise Time

Tr

-

3.2

-

Turn-off Delay Time

Td(off)

-

38.2

-

Fall Time

Tf

-

12

-

Input Capacitance

Ciss

-

954

-

pF

VGS=0

VDS= -15V

f=1.0 MHz

Output Capacitance

Coss

-

115

-

Reverse Transfer Capacitance

Crss

-

77

-

Source -Drain Diode

Forward On Voltage

2

VSD

-

-1.0

V

IS= -1A, VGS=0

Reverse Recovery Time

2

Trr

-

20.2

-

nS

IS= -4A, VGS=0,

dl/dt=100A/µs

Reverse Recovery Charge

Qrr

-

11.2

-

nC

Continuous Source Current (Body Diode)

IS

-

-2.2

A

VD=VG=0, VS= -1V

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad.

유사한 부품 번호 - SSG5509A

제조업체	부품명	데이터시트	상세설명
SeCoS Halbleitertechnol...	SSG5509A	1Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET

More results

유사한 설명 - SSG5509A

제조업체	부품명	데이터시트	상세설명
SeCoS Halbleitertechnol...	SSI2007	1Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSI3439J	606Kb / 4P	N & P-Ch Enhancement Mode Power MOSFET
	SSG4520H	1Mb / 6P	N & P-Ch Enhancement Mode Power MOSFET
	SSG4503A-C	631Kb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSPRD6560-C	593Kb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSG5509A	1Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSG4510	1Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSG4502CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SPRD4504-C	429Kb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSG2601	733Kb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSG4536C	126Kb / 2P	N & P-Ch Enhancement Mode Power MOSFET

More results

SSG5509A 데이터시트(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

SSG5509A 데이터시트(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

유사한 부품 번호 - SSG5509A

유사한 설명 - SSG5509A

Html Pages

1 2 3 4 5 6 7

데이터시트 다운로드

링크 URL