SSRF90N06 datasheet(2/4 Pages) SECOS

부품명	SSRF90N06

상세설명	N-Ch Enhancement Mode Power MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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2 / 4 page

Elektronische Bauelemente

SSRF90N06

N-Ch Enhancement Mode Power MOSFET

87A, 60V, RDS(ON) 26.5mΩ

01-Dec-2010 Rev.B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBO MIN.

TYP. MAX. UNIT

TEST CONDITIONS

Static

Gate-Threshold Voltage

VGS(th)

1

-

3

V

VDS= VGS, ID = 250 μA

Gate-Body Leakage

IGSS

-

±100

nA

VDS = 0V, VGS= 20V

-

1

VDS= 48V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-

25

μA

VDS= 48V, VGS= 0V, TJ=55°C

On-State Drain Current

a

ID(on)

120

-

A

VDS = 5V, VGS= 10V

-

26.5

VGS= 10V, ID= 30 A

Drain-Source On-Resistance

a

RDS(ON)

-

32.5

mΩ

VGS= 4.5V, ID= 20 A

Forward Transconductance

a

gfs

-

30

-

S

VDS= 15V, ID= 30 A

Diode Forward Voltage

VSD

-

1.1

-

V

IS= 34 A, VGS= 0 V

Dynamic

b

Total Gate Charge

Qg

-

8.5

-

Gate-Source Charge

Qgs

-

3.3

-

Gate-Drain Charge

Qgd

-

4.0

-

nC

VDS = 15 V

VGS = 4.5 V

ID = 90 A

Turn-on Delay Time

Td(on)

-

18

-

Rise Time

Tr

-

59

-

Turn-off Delay Time

Td(off)

-

37

-

Fall Time

Tf

-

9

-

nS

VDD= 25 V

ID= 34 A

VGEN = 10 V

RL= 25 

Notes

a.

Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.

b.

Guaranteed by design, not subject to production testing.

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