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2SK3451-01MR 데이터시트(PDF) 3 Page - Fuji Electric

부품명 2SK3451-01MR
상세설명  N-CHANNEL SILICON POWER MOSFET
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제조업체  FUJI [Fuji Electric]
홈페이지  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3451-01MR 데이터시트(HTML) 3 Page - Fuji Electric

  2SK3451-01MR Datasheet HTML 1Page - Fuji Electric 2SK3451-01MR Datasheet HTML 2Page - Fuji Electric 2SK3451-01MR Datasheet HTML 3Page - Fuji Electric 2SK3451-01MR Datasheet HTML 4Page - Fuji Electric  
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3
10
0
10
1
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
ID [A]
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
VSD [V]
Typical Forward Characteristics of Reverse Diode
0
10
203040
5060
7080
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
480V
300V
Vcc= 120V
2SK3451-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
VGS=f(Qg):ID=12A, Tch=25°C
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
IF=f(VSD):80µs Pulse test,Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10
Ω
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Tch [
°C]


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