KDV804KS datasheet(1/2 Pages) KEC

부품명	KDV804KS

상세설명	SILICON EPITAXIAL PLANAR DIODE

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제조업체	KEC [KEC(Korea Electronics)]

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TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL

CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.

FEATURES

Low Series Resistance : rs=0.3(TYP.).

Small Package : SOT-23.

MAXIMUM RATING (Ta=25 )

2003. 9. 16

1/2

SEMICONDUCTOR

TECHNICAL DATA

KDV804KS

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Reverse Voltage

VR

15

V

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

Grade

Type Name

Marking

Lot No.

T3

CLASSIFICATION OF CAPACITANCE RATIO GRADE

DIM

MILLIMETERS

1. ANODE 1

2. ANODE 2

3. CATHODE

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

P

7

21

3

+

_

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Voltage

VR

IR=10 A

15

-

V

Reverse Current

IR

VR=15V

-

50

nA

Capacitance

C2V

VR=2V, f=1MHz

42

-

47.5

pF

C8V

VR=8V, f=1MHz

24

-

28.8

Capacitance Ratio

C2V/C8V

1.74

-

1.85

Series Resistance

rS

C=38pF, f=100MHz

-

0.3

0.4

GRADE

CAPACITANCE(C2V)

UNIT

A

42 43.5

pF

B

43 44.5

C

44 45.5

D

45 46.5

E

46 47.5

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