KTA1517_06 datasheet(1/3 Pages) KEC

부품명	KTA1517

상세설명	EPITAXIAL PLANAR PNP TRANSISTOR

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제조업체	KEC [KEC(Korea Electronics)]

홈페이지	http://www.keccorp.com

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2006. 2. 16

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SEMICONDUCTOR

TECHNICAL DATA

KTA1517

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 0

LOW NOISE AMPLIFIER APPLICATION.

FEATURES

High Voltage : VCEO=-120V.

Excellent hFE Linearity

: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).

High hFE: hFE=200 700.

Low Noise : NF=1dB(Typ.), 10dB(Max.).

Complementary to KTC3911S.

MAXIMUM RATING (Ta=25

)

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

Note : hFE Classification GR(G):200 400 BL(L):350 700

h

Rank

Type Name

Marking

Lot No.

AC

FE

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-120V, IE=0

-

-0.1

A

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-0.1

A

DC Current Gain

hFE (Note)

VCE=-6V, IC=-2mA

200

-

700

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-10mA, IB=-1mA

-

-0.3

V

Transition Frequency

fT

VCE=-6V, IC=-1mA

-

100

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

4.0

-

pF

Noise Figure

NF

VCE=-6V, IC=-0.1mA

f=1kHz, Rg=10k

-

1.0

10

dB

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-120

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-100

mA

Base Current

IB

-20

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

유사한 부품 번호 - KTA1517_06

제조업체	부품명	데이터시트	상세설명
KEC(Korea Electronics)	KTA1517	775Kb / 3P	EPITAXIAL PLANAR PNP TRANSISTOR

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