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BC817 데이터시트(PDF) 1 Page - KODENSHI_AUK CORP. |
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BC817 데이터시트(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 4 page KSD-T5C025-000 1 BC817 NPN Silicon Transistor PIN Connection SOT-23 Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807 Ordering Information Type NO. Marking Package Code BC817 NA □ □ ① ② ③ SOT-23 ① Device Code ② hFE Rank ③ Year&Week Code Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 35 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IE=0 35 - - V Base-Emitter turn on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV Collector cut-off current ICBO VCB=25V, IE=0 - - 100 nA DC current gain hFE * VCE=1V, IC=100mA 100 - 630 - Transition frequency fT VCB=5V, IC=10mA - 100 - MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 16 - pF * : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630 1 2 3 |
유사한 부품 번호 - BC817 |
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유사한 설명 - BC817 |
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