SSG4801 datasheet(2/4 Pages) SECOS

부품명	SSG4801

상세설명	Dual-P Enhancement Mode Power MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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2 / 4 page

SSG4801

-5 A, -30 V, RDS(ON) 50 m

Dual-P Enhancement Mode Power MOSFET

Elektronische Bauelemente

19-Jan-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Drain-Source Breakdown Voltage

BVDSS

-30

-

V

VGS=0V, ID = -250uA

Gate Threshold Voltage

VGS(th)

-0.5

-

-1.0

V

VDS=VGS, ID = -250uA

Forward Transconductance

2

gfs

-

11

-

S

VDS= -5V, ID = -5A

Gate-Source Leakage Current

IGSS

-

±100

nA

VGS= ±12V

Drain-Source Leakage

Current

TJ=25°C

IDSS

-

-1

μA

VDS= -24V, VGS=0V

TJ=55°C

-

-5

μA

VDS= -24V, VGS=0V

Static Drain-Source On-Resistance

2

RDS(ON)

-

50

mΩ

VGS= -10V, ID= -5A

-

65

VGS= -4.5V, ID= -4A

-

120

VGS= -2.5V, ID= -1A

Total Gate Charge

2

Qg

-

9.5

-

nC

VDS= -15V, ID = -5A, VGS= -4.5V

Gate-Source Chagre

Qgs

-

2.0

-

Gate-Drain (“Miller”) Change

Qgd

-

3.1

-

Turn-on Delay Time

2

Td(ON)

-

12

-

nS

VDS= -15V, VGS= -10V

RL=3Ω, RG=6Ω

Rise Time

Tr

-

4

-

Turn-off Delay Time

Td(OFF)

-

37

-

Fall Time

Tf

-

12

-

Input Capacitance

CISS

-

952

-

pF

VDS= -15V

VGS=0V

f=1.0MHz

Output Capacitance

COSS

-

103

-

Reverse Transfer Capacitance

CRSS

-

77

-

Source-Drain Diode

Forward On Voltage

2

VSD

-

-1.2

V

IS= -1.7A, VGS=0V

Notes：

1 Surface Mounted on FR4 Board, t

10sec.

≦

2. Pulse width

300 μs, duty cycle

2

≦≦

%

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