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UC3666L-B10-R 데이터시트(PDF) 4 Page - Unisonic Technologies |
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UC3666L-B10-R 데이터시트(HTML) 4 Page - Unisonic Technologies |
4 / 8 page UC3666 Preliminary CMOS IC UNISONICTECHNOLOGIESCO.,LTD 4 of 8 www.unisonic.com.tw QW-R502-489.a ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Input Supply Voltage VIN GND-0.3 ~ +6.5 V SW Voltage -0.3 ~ VIN +0.3 V ENB, VFB Voltage -0.3 ~ VIN V SW Peak Current 1.5 A ESD Classification Class 2 Junction Temperature TJ 125 °C Operating Temperature Torp -20 ~ +85 °C Storage Temperature Range TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. The IC has a protection circuit against static electricity. Do not apply high static electricity or high voltage that exceeds the performance of the protection circuit to the IC. THERMAL DATA PARAMETER SYMBOL TYP MAX UNIT Junction ambient θJA 50 °C/W ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions, unless otherwise specified; VIN=3.6V, TA=0 ~ 70°C (typical=25°C)) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Supply Voltage VIN 2.5 5.5 V Feedback Current IVFB -30 0.5 30 nA TA=25°C 0.588 0.6 0.612 V Regulated Feedback Voltage VFB -40°C≤TA≤85°C 0.582 0.6 0.618 V Reference Voltage Line Regulation ΔVFB VIN=2.5V ~ 5.5V 0.04 0.4 %V Output Voltage Line Regulation ΔVOUT VIN=2.5V ~ 5.5V 0.04 0.4 %V Output Voltage Load Regulation VLOADRGE 0.5 % Shutdown Current IS VEN=0V, VIN=5.5V 0.01 1 µA SW Leakage Current ILEAK VEN=0V, VIN=5.5V, VSW=0V or 5.5V -1 1 µA PMOSFET On Resistance RDSONP ISW=100mA 0.35 Ω NMOSFET On Resistance RDSONN ISW=100mA 0.24 Ω PMOSFET Current Limit IPCL Duty Cycle=100% Current Pulse Width<1ms 0.9 1.2 1.4 A Oscillator Frequency fOSC 1.2 1.6 2.0 MHZ Thermal Shutdown Threshold TS 145 °C EN High Level Input Voltage VEN -40°C≤TA≤+85°C 0.9 V EN Low Level Input Voltage VEN -40°C≤TA≤+85°C 0.3 V EN Input Current IEN VEN=0V ~ VIN -1 1 µA |
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