2N3906RLRMG datasheet(1/7 Pages) ONSEMI

부품명	2N3906RLRMG

상세설명	General Purpose Transistors

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February, 2010 − Rev. 4

1

Publication Order Number:

2N3906/D

2N3906

General Purpose

Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

VCEO

40

Vdc

Collector − Base Voltage

VCBO

40

Vdc

Emitter − Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD

625

5.0

mW

mW/°C

Total Power Dissipation @ TA = 60°C

PD

250

mW

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150

°C

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

3

2

BASE

1

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

2N

3906

ALYWG

G

A

= Assembly Location

L

= Wafer Lot

Y

= Year

W

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

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