MJ11029 datasheet(3/4 Pages) ONSEMI

부품명	MJ11029

상세설명	High-Current Complementary Silicon Power Transistors

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MJ11028, MJ11030, MJ11032 (NPN)

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ORDERING INFORMATION

Device

Package

Shipping

MJ11028

TO−204

100 Units / Tray

MJ11028G

TO−204

(Pb−Free)

MJ11029

TO−204

MJ11029G

TO−204

(Pb−Free)

MJ11030

TO−204

MJ11030G

TO−204

(Pb−Free)

MJ11032

TO−204

MJ11032G

TO−204

(Pb−Free)

MJ11033

TO−204

MJ11033G

TO−204

(Pb−Free)

100

0.2

Figure 2. DC Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

0.5

1

2

5

10

20

50

200

20

10

5

50

2

1

0.5

0.2

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

SECOND BREAKDOWN LIMITED

MJ11028, 29

MJ11032, 33

100

There are two limitations on the power−handling ability

of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

IC, COLLECTOR CURRENT (AMP)

100 k

IC, COLLECTOR CURRENT (AMP)

50 k

20 k

10 k

5 k

2 k

500

Figure 3. DC Current Gain

1

2

5

10

100

20

50

Figure 4. “On” Voltage

100

VCE = 5 V

TJ = 25°C

1 k

200

MJ11029, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

5

4

3

2

1

2

5

10

100

20

50

0

3

TJ = 25°C

IC/IB = 100

VBE(sat)

80

ms

(PULSED)

MJ11029, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

80

ms

(PULSED)

VCE(sat)

유사한 부품 번호 - MJ11029

제조업체	부품명	데이터시트	상세설명
Mospec Semiconductor	MJ11029	154Kb / 3P	POWER TRANSISTOR(50A,60-120V,300W)
Motorola, Inc	MJ11029	153Kb / 4P	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
ON Semiconductor	MJ11029	153Kb / 4P	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 1995
Seme LAB	MJ11029	59Kb / 2P	COMPLEMENTARY DARLINGTON POWER TRANSISTOR
ON Semiconductor	MJ11029	68Kb / 4P	High?묬urrent Complementary Silicon Power Transistors December, 2005 ??Rev. 5

More results

유사한 설명 - MJ11029

제조업체	부품명	데이터시트	상세설명
New Jersey Semi-Conduct...	2N5684	206Kb / 2P	HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS
New Jersey Semi-Conduct...	MJ11028	84Kb / 2P	High-Current Complementary Silicon Power Transistors
ON Semiconductor	2N5684	133Kb / 8P	High-Current Complementary Silicon Power Transistors May, 2001 ??Rev. 10
ON Semiconductor	2N5684G	119Kb / 5P	High-Current Complementary Silicon Power Transistors October, 2007 - Rev. 12
New Jersey Semi-Conduct...	MJ14001	121Kb / 2P	High-Current Complementary Silicon Power Transistors
ON Semiconductor	MJ11015	121Kb / 4P	High-Current Complementary Silicon Transistors September, 2008 ??Rev. 5
ON Semiconductor	MJ11012	68Kb / 4P	High-Current Complementary Silicon Transistors May, 2001 ??Rev. 4
NTE Electronics	NTE29	24Kb / 2P	Silicon Complementary Transistors High Power, High Current Switch
	NTE2534	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2513	22Kb / 2P	Silicon Complementary Transistors High Current Switch

More results

MJ11029 데이터시트(PDF) 3 Page - ON Semiconductor

MJ11029 데이터시트(HTML) 3 Page - ON Semiconductor

유사한 부품 번호 - MJ11029

유사한 설명 - MJ11029

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