MJE4343_06 datasheet(1/7 Pages) ONSEMI

부품명	MJE4343

상세설명	High?뭋oltage High Power Transistors

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High−Voltage

High Power

Transistors

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

• High Collector−Emitter Sustaining Voltage —

NPN

PNP

VCEO(sus) = 160 Vdc — MJE4343 MJE4353

• High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ)

• Low Collector−Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC

= 8.0 Adc

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

160

Vdc

Collector−Base Voltage

VCB

160

Vdc

Emitter−Base Voltage

VEB

7.0

Vdc

Collector Current — Continuous

Peak (1)

IC

16

20

Adc

Base Current — Continuous

IB

5.0

Adc

Total Power Dissipation @ TC = 25_C

PD

125

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

1.0

_C/W

(1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.

3.5

0

Figure 1. Power Derating

Reference: Ambient Temperature

TA, AMBIENT TEMPERATURE (°C)

25

50

100

125

3.0

2.5

0.5

75

150

1.0

1.5

2.0

ON Semiconductor

t

March, 2006 − Rev. 4

1

Publication Order Number:

MJE4343/D

MJE4343

MJE4353

16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

160 VOLTS

NPN

PNP

CASE 340D−02

TO−218 TYPE

유사한 부품 번호 - MJE4343_06

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJE4343G	138Kb / 8P	High-Voltage - High Power Transistors May, 2012 ??Rev. 5

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