전자부품 데이터시트 검색엔진 |
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QS8M13 데이터시트(PDF) 3 Page - Rohm |
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QS8M13 데이터시트(HTML) 3 Page - Rohm |
3 / 11 page www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet QS8M13 Electrical characteristics (Ta = 25 C) <Tr2(Pch)> Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA -28 39 ID=5A, VGS=10V -40 56 ID=2.5A, VGS=4.5V -45 63 ID=2.5A, VGS=4.0V Forward transfer admittance l Yfs l3 - - S VDS=10V, ID=5A Input capacitance Ciss - 1100 - pF VDS=10V Output capacitance Coss - 150 - pF VGS=0V Reverse transfer capacitance Crss - 130 - pF f=1MHz Turn-on delay time td(on) -9 - ns ID=2.5A, VDD 15V Rise time tr - 40 - ns VGS=10V Turn-off delay time td(off) - 90 - ns RL=6 Fall time tf - 55 - ns RG=10 Total gate charge Qg - 10 - nC ID=5A, VDD 15V Gate-source charge Qgs - 3.6 - nC VGS=5V Gate-drain charge Qgd - 3.0 - nC *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Forward Voltage VSD -- 1.2 V Is=5A, VGS=0V *Pulsed Parameter Conditions Conditions m Static drain-source on-state resistance RDS (on) Parameter * * * * * * * * * * * * * * * * * * 3/10 2011.05 - Rev.A |
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유사한 설명 - QS8M13 |
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