BDS20SMD datasheet(2/2 Pages) SEME-LAB | SILICON EPIBASE NPN DARLINGTON TRANSISTOR

부품명	BDS20SMD

부품 상세설명	SILICON EPIBASE NPN DARLINGTON TRANSISTOR

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홈페이지	http://www.semelab.co.uk

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SILICON EPIBASE NPN

DARLINGTON TRANSISTOR

BDS20SMD

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 8217

Issue 1

Page 2 of 2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

VCB = 80V

IE = 0

0.2

VCB = 60V

IE = 0

ICBO

Collector-Cut-Off Current

TC = 150°C

1.0

ICEO

Collector-Cut-Off Current

VCE = 40V

IB = 0

0.5

IEBO

Emitter-Cut-Off Current

VEB = 5V

IC = 0

2

mA

IC = 0.5A

VCE = 3V

1000

hFE

(1)

Forward-current transfer

ratio

IC = 3A

VCE = 3V

1000

IC = 3A

IB = 12mA

2

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 20mA

4

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 5A

IB = 20mA

2.8

VBE(on)

(1)

Base-Emitter On Voltage

IC = 3A

VCE = 3V

3.5

V

DYNAMIC CHARACTERISTICS

IC = 0.5A

VCE = 4V

fT

Transition Frequency

f = 2MHz

8

MHz

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%

MECHANICAL DATA

Dimensions in mm (inches)

3.60 (0.142)

Max.

3.70 (0.146)

3.41 (0.134)

3.70 (0.146)

3.41 (0.134)

0.89

(0.035)

min.

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

0.50 (0.020)

0.26 (0.010)

1

3

2

SMD1 (TO-276AB)

Underside View

Pad 1 – Base

Pad 2 – Collector

Pad 3 - Emitter

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