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SS8550-D 데이터시트(PDF) 1 Page - Micro Commercial Components |
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1 / 2 page SS8550 -C PNP Silicon Transistors TO-92 Features Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) 40 --- Vdc V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) 25 --- Vdc V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) 6.0 --- Vdc ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) --- 0.1 uAdc ICEO Collector Cutoff Current (VCE=20Vdc, IB=0) --- 0.1 uAdc IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0) --- 0.1 uAdc ON CHARACTERISTICS hFE(1) DC Current Gain (IC=100mAdc, VCE=1.0Vdc) 85 400 --- hFE(2) DC Current Gain (IC=800mAdc, VCE=1.0Vdc) 40 --- --- VCE(sat) Collector-Emitter Saturation Voltage (IC=800mAdc, IB=80mAdc) --- 0.8 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=800mAdc, IB=80mAdc) --- 1.2 Vdc VEB Base- Emitter Voltage (IE=1.5Adc) --- 1.8 Vdc SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=50mAdc, VCE=10Vdc, f=30MHz) 190 --- MHz • Marking : SS8550 • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55 OC to +150OC CLASSIFICATION OF HFE (1) Rank C D Range 120-200 160-300 E B C A E B C D G omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: A 2011/01/01 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .170 .190 4.33 4.83 B .170 .190 4.30 4.83 C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 E .130 .160 3.30 3.96 G .0 96 .104 2.44 2.64 TM Micro Commercial Components www.mccsemi.com 1 of 2 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 SS8550 -D |
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