Pre-Production

This is a product in the pre-production phase of development. Device

Ramtron International Corporation

characterization is complete and Ramtron does not expect to change the

1850 Ramtron Drive, Colorado Springs, CO 80921

specifications. Ramtron will issue a Product Change Notice if any

(800) 545-FRAM, (719) 481-7000

specification changes are made.

http://www.ramtron.com

Rev. 2.2

Sept. 2010

Page 1 of 15

FM25H20

2Mb Serial 3V F-RAM Memory

Features

2M bit Ferroelectric Nonvolatile RAM

•

Organized as 256K x 8 bits

•

•

10 Year Data Retention

•

NoDelay™ Writes

•

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

•

Up to 40 MHz Frequency

•

Direct Hardware Replacement for Serial Flash

•

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

•

Hardware Protection

•

Software Protection

Low Power Consumption

•

Low Voltage Operation 2.7V – 3.6V

•

Sleep Mode Current 3

µA (typ.)

Industry Standard Configurations

•

Industrial Temperature -40

°C to +85°C

•

8-pin “Green”/RoHS TDFN Package

•

8- pin “Green”/RoHS EIAJ SOIC Package

Description

The FM25H20 is a 2-megabit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by Serial

Flash and other nonvolatile memories.

Unlike Serial Flash, the FM25H20 performs write

operations at bus speed. No write delays are incurred.

Data is written to the memory array immediately

after it has been transferred to the device. The next

bus cycle may commence without the need for data

polling. The product offers virtually unlimited write

endurance, orders of magnitude more endurance than

Serial Flash. Also, F-RAM exhibits lower power

consumption than Serial Flash.

These capabilities make the FM25H20 ideal for

nonvolatile memory applications requiring frequent

or rapid writes or low power operation. Examples

range from data collection, where the number of

write cycles may be critical, to demanding industrial

controls where the long write time of Serial Flash can

cause data loss.

The FM25H20 provides substantial benefits to users

of Serial Flash as a hardware drop-in replacement.

The FM25H20 uses the high-speed SPI bus, which

enhances the high-speed write capability of F-RAM

technology. Device specifications are guaranteed

over an industrial temperature range of -40°C to

+85°C.

Pin Configuration

S

Q

W

VSS

VDD

HOLD

C

D

1

2

3

4

8

7

6

5

Pinout is equivalent to other SPI F-RAM devices.

Pin Name

Function

/S

Chip Select

/W

Write Protect

/HOLD

Hold

C

Serial Clock

D

Serial Data Input

Q

Serial Data Output

VDD

Supply Voltage (2.7 to 3.6V)

VSS

Ground

Ordering Information

FM25H20-DG

8-pin “Green”/RoHS TDFN

FM25H20-DGTR

8-pin “Green”/RoHS TDFN,

Tape & Reel

FM25H20-G

8-pin “Green”/RoHS EIAJ SOIC

FM25H20-GTR

8-pin “Green”/RoHS EIAJ

SOIC, Tape & Reel

/S

Q

/W

VSS

VDD

/HOLD

C

D

1

2

3

4

8

7

6

5

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