전자부품 데이터시트 검색엔진 |
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2SC937 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC937 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC937 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.8 V ICBX Collector Cutoff Current VCB= 1200V; VEB= 1.5V 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.2 mA tf Fall Time IC= 2.5A, IB1= 0.8A, IB2= -1.1A; LB= 10μH 1.2 μs isc Website:www.iscsemi.cn 2 |
유사한 부품 번호 - 2SC937 |
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유사한 설명 - 2SC937 |
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