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2SC3320 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3320 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3320 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=6A ; VCE=5V 10 Switching times resistive load ton Turn-on time 0.5 μs ts Storage time 1.5 μs tf Fall time IC=7.5A IB1=1.5A IB2=-3A RL=20Ω PW=20μs;Duty=<2% 0.15 μs |
유사한 부품 번호 - 2SC3320 |
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유사한 설명 - 2SC3320 |
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