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2SC4300 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4300 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4300 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=4V 10 30 fT Transition frequency IE=-0.5A ; VCE=12V 6 MHz COB Output capacitance VCB=10V;f=1MHz 75 pF Switching times ton Turn-on time 1 μs tstg Storage time 5 μs tf Fall time IC=2A;IB1=0.3A;IB2=-1A; RL=125Ω;VCC=250V 1 μs |
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