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2SD2110 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2110 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 4mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 3.5 V ICBO Collector Cutoff Current VCB= 65V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 65V; RBE= ∞ 10 μA hFE DC Current Gain IC= 2A; VCE= 3V 1000 20000 VECF C-E Diode Forward Voltage IF= 4A 3.0 V isc Website:www.iscsemi.cn 2 |
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